The effects of Zn incorporation on electrical, photo luminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashitha, V K and Priya, K and Ali, Muhammed A V and Keshav, Rashmitha and Rao, Gowrish K and Mahesha, M G (2020) The effects of Zn incorporation on electrical, photo luminescence and spectral sensitivity of SILAR deposited CdS thin films. Materials Research Express, 7. ISSN 2053-1591

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Abstract

The SILAR deposited CdS films were in corporated with various concentrations of zincusingzinc acetate and zincchlorideprecursors.The presence of zinc was found toalter the crystal structure and energy band gap of the films. The band gap increased by nearly 44% with the increase of zinc concentration in the films. The photo luminescencespectra of the films revealed the presence of several localized defects level swith in the forbiddenband gap.The peakspectralresponsewavelengthwas found to vary from 500nm to 400 nm with the increase of zinc.The photo current was found to increase with the Cd:Znratio.The film s with relatively high concentrations of zinc were found to be better suited for the photo detector applications due to the irhigher photo current to dark current ratio

Item Type: Article
Uncontrolled Keywords: CdS,zinc,SILAR,spectralsensitivity,photoluminescence
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 07 May 2020 06:20
Last Modified: 07 May 2020 06:20
URI: http://eprints.manipal.edu/id/eprint/155100

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