The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashith, V K and Ali, Muhammed A V and Keshav, Rashmitha and Rao, Gowrish K and Mahesha, M G (2020) The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films. Materials Research Express, 7. ISSN 2053-1591

[img] PDF
8316.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy

Abstract

The SILAR deposited CdS films were incorporated with various concentrations of zinc using zinc acetate and zinc chloride precursors. The presence of zinc was found to alter the crystal structure and energy bandgap of the films. The bandgap increased by nearly 44% with the increase of zinc concentration in the films. The photoluminescence spectra of the films revealed the presence of several localized defects levels within the forbidden bandgap. The peak spectral response wavelength was found to vary from 500 nm to 400 nm with the increase of zinc. The photocurrent was found to increase with the Cd:Zn ratio. The films with relatively high concentrations of zinc were found to be better suited for the photodetector applications due to their higher photocurrent to dark current ratio.

Item Type: Article
Uncontrolled Keywords: :CdS, zinc, SILAR, spectral sensitivity, photoluminescence
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 23 Jun 2020 10:40
Last Modified: 23 Jun 2020 10:40
URI: http://eprints.manipal.edu/id/eprint/155225

Actions (login required)

View Item View Item