A 167.18 ppm/°C Temperature Coefficient, Area Efficient Voltage Reference Using Only MOS Transistors

Guruprasad, . and Kumara, Shama (2020) A 167.18 ppm/°C Temperature Coefficient, Area Efficient Voltage Reference Using Only MOS Transistors. Serbian Journal of Electrical Engineering, 17 (1). pp. 31-40. ISSN 1451-4869

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Abstract

In this paper, design of a voltage reference circuit using only MOS transistors and without employing an operational amplifier is presented. A proportional to absolute temperature [PTAT] voltage and a PTAT current are designed then difference of the PTAT voltage and product of the PTAT current and resistor gives the temperature independent voltage. The advantages of both sub-threshold and strong inversion region operation of MOS transistors are exploited in the design. The voltage reference is implemented using standardCMOS 180 nm technology. The voltage reference provides a voltage of 224.3 mV consuming a quiescent current of 30 μA at room temperature. Post layout simulation results show that the proposed voltage reference has a temperature coefficient of 167.18 ppm/°C and varies only 3mV when there is a ±10% variation in supply voltage. The circuit occupies an area of only 93.6×32.6μm on the chip, making it suitable for area constraint applications

Item Type: Article
Uncontrolled Keywords: Band-gap reference, Sub 1V voltage reference, PTAT, Temperature coefficient.
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 25 Jun 2020 10:00
Last Modified: 25 Jun 2020 10:00
URI: http://eprints.manipal.edu/id/eprint/155299

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