Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Salunkhe, Parashurama and Ali, Muhammed A V and Kekuda, Dhananjaya (2020) Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering. Materials Research Express, 7. ISSN 2053-1591

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We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200)to (111)in a higher O2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p3/2, Ni 2p1/2 domains along with their satellite peaks. It infers the presence of both Ni+2 and Ni+3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films.

Item Type: Article
Uncontrolled Keywords: electrical conductivity, oxygen flow rate, NiO thin films, X-ray photoelectron spectroscopy, chemical state quantification
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 25 Jun 2020 10:14
Last Modified: 25 Jun 2020 10:14

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