Investigation on ZnTe/CdxZn1-xTe heterostructure for photodetector applications

Moger, Sahana N and Mahesha, M G (2020) Investigation on ZnTe/CdxZn1-xTe heterostructure for photodetector applications. Sensors and Actuators, A: Physical, 315. ISSN 0924-4247

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ZnTe/CdxZn1-xTe (0.2 ≤ x ≤ 1.0) heterostructures were fabricated by thermal evaporationmethod by using CdTe and ZnTe as source materials. The properties of heterostructures were analysed by X-ray diffraction (XRD), photoluminescence (PL), temperature dependent Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and I-V characterizations. Double diffraction peak in the diffractogram has confirmed bilayer with no or minimum diffusion across the junction. Effect of thermal expansion and an-harmonic coupling to the other phonon modes causing strain induced shift of the longitudinal optical modes were studied through low-temperature Raman spectra. The junction parameters such as barrier height, ideality factor and series resistance were extracted from I - V characteristics by applying various models. ZnTe/CdxZn1-xTe heterostructures having low barrier height and good photo response are explored in this work for the photodetector application. Sample having composition x = 0.8 showed higher response in the visible region with improved response at longer wavelengths.

Item Type: Article
Uncontrolled Keywords: p-ZnTe/CdZnTe heterostructures XPS Low-temperature Raman I-V characteristics Photodetectors
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 12 Jan 2021 09:06
Last Modified: 12 Jan 2021 09:06

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