Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system

Hegde, Ganesh Shridhar and Prabhu, A N and Huang, R Y and Kuo, Y K (2020) Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system. Journal of Materials Science: Materials in Electronics, 31. pp. 19511-19525. ISSN 0957-4522

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Abstract

Polycrystalline samples of (Bi1-xInx)2Se2.7Te0.3 (x = 0.00, 0.02, and 0.04) were prepared by the solid-state reaction technique. X-ray diffraction pattern confirms that the polycrystalline samples have a hexagonal structure with spacegroup R 3 m. The surface morphologic study reveals the existence of porous behavior in the studied samples due to the volatilization of Selenium. Energy dispersive X-ray analysis validates the expected and observed elemental composition of the samples. Electrical resistivity has shown metallic behavior. Hall effect and Seebeck coefficient measurements indicate the p-type and n-type conduction for the pristine sample Bi2Se3 and the (Bi1-xInx)2Se2.7Te0.3 samples, respectively. The thermal conductivity and electrical resistivity were found to reduce by 7.5 and 9 times, respectively, for (Bi0.96In0.04)2Se2.7Te0.3 compared to the pristine sample Bi2Se3.

Item Type: Article
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 28 Jan 2021 09:29
Last Modified: 28 Jan 2021 09:29
URI: http://eprints.manipal.edu/id/eprint/156362

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