Synergistic effect of In doping on electrical and thermal properties of Cu2SnSe3 thermoelectric system

Thomas, Riya and Rao, Ashok and Jiang, Zhao-Ze and Kuo, Yung-Kango (2021) Synergistic effect of In doping on electrical and thermal properties of Cu2SnSe3 thermoelectric system. Journal of material Science: Materials in Electronics. pp. 6957-6964. ISSN 0957-4522

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Abstract

Cu2SnSe3 has been considered as a potential thermoelectric material owing to its tunable transport properties and its phonon-glass-electron-crystal (PGEC) characteristics. Here, p-type pure and In-doped Cu2SnSe3 samples are synthe�sized by the solid-state sintering technique. Cubic structure with F43m space group is maintained for all the samples, and a linear increase in lattice param�eter with increasing In concentration has been observed. The nature of electrical resistivity changes from semiconducting to metallic behavior for samples with x[ 0.10. The decrease in both electrical resistivity and Seebeck coefficient with an increase in x is attributed to the increased hole concentration. Such a scenario is confirmed from the room-temperature Hall effect measurements. Indium doping also reduces the thermal conductivity of the Cu2SnSe3 system as a result of increased phonon scattering due to the mass fluctuation. Concurrently, enhancement of thermoelectric power factor (PF) and figure of merit (ZT) is achieved with In doping at Sn site of Cu2SnSe3. The maximum ZT of 0.04 has been exhibited by the sample with x = 0.25 at 400 K, which is six times higher than that of the undoped Cu2SnSe3

Item Type: Article
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 29 Jun 2021 09:41
Last Modified: 29 Jun 2021 09:41
URI: http://eprints.manipal.edu/id/eprint/156852

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