Thermal neutron irradiation efects on structural and electrical properties of n‑type 4H‒SiC

Vali, Indudhar Panduranga and Shetty, Pramoda Kumara and Mahesha, M G and Rao, Mala N and Kesari, Swayam (2020) Thermal neutron irradiation efects on structural and electrical properties of n‑type 4H‒SiC. Journal of Materials Science: Materials in Electronics, 31 (11). pp. 8496-8501. ISSN 0957-4522

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Abstract

In this article, the thermal neutron irradiation (NI) efects on the structural properties of n-4H–SiC and electrical properties of Al/n-4H–SiC Schottky contacts have been reported. The noticeable modifcations observed in the irradiated samples were studied by using diferent techniques. The X-ray difraction studies revealed a decrease in the lattice parameter of the irradi�ated samples due to isotopic modifcations and irradiation-induced defects in the material. As a result, the energy bandgap, Urbach energy, longitudinal optical phonon‒plasmon coupling mode, free carrier concentration, defect related photolumi�nescence and nitrogen bound exciton photoluminescence bands were prominently afected in the irradiated samples. The current–voltage characteristics of neutron irradiated Al/n-4H–SiC Schottky contacts were also strikingly afected in terms of zero-bias ofset as well as decrease in the forward current. These modifcations along with the increase in the Schottky junction parameters (such as ideality factor, Schottky barrier height and series resistance) were attributed to neutron-induced isotopic efects and decrease in the free carrier concentration due to induced defect states

Item Type: Article
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 29 Jul 2021 05:35
Last Modified: 29 Jul 2021 05:35
URI: http://eprints.manipal.edu/id/eprint/156969

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