A novel self write-terminated driver for hybrid STT-MTJ/ CMOS LIM structure

Barla, Prashanth and Joshi, Vinod Kumar and Bhat, Somashekara (2021) A novel self write-terminated driver for hybrid STT-MTJ/ CMOS LIM structure. Aim Shams Engineering Journal, 12. pp. 1839-1847. ISSN 2090-4479

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Abstract

A novel self write-terminated driver is proposed for the hybrid spin transfer torque-magnetic tunnel junction (STT-MTJ)/CMOS circuits based on logic-in-memory (LIM) structure. Using continuous write monitoring mechanism, the novel circuitry completely eliminates the unnecessary flow of write current which abolishes the wastage of write energy in the proposed write driver. Hence, the total energy required for writing process is reduced noticeably by 63.32% in novel write driver compared to the con�ventional write circuit. Monte-Carlo simulation is then performed by incorporating process and mis�match variations for CMOS and extracted parameters of MTJ. Simulations are also carried out for the proposed write driver, by varying the transistor sizes and supply voltage to analyze its switching prob�ability to obtain safe operating region. Further, the proposed write driver is integrated with hybrid full adder to demonstrate its feasibility in low-power VLSI circuits.

Item Type: Article
Uncontrolled Keywords: Spintronics Logic-in-memory Magnetic tunnel junction Tunnel magnetoresistance Spin transfer torque
Subjects: Engineering > MIT Manipal > Electronics and Communication
Depositing User: MIT Library
Date Deposited: 25 Aug 2021 09:06
Last Modified: 25 Aug 2021 09:06
URI: http://eprints.manipal.edu/id/eprint/157171

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