Property evaluation of spin coated Al doped ZnO thin films and Au/AZO/FTO Schottky diodes

Chaitra, U and Ali, Muhammed A V and Mahesha, M G and Kompa, Akshay Kumar and Kekuda, Dhananjaya and Rao, Mohan K (2021) Property evaluation of spin coated Al doped ZnO thin films and Au/AZO/FTO Schottky diodes. Superlattices and Microstructures, 155. ISSN 0749-6036

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In the present work, the structural, optical and electrical properties of pristine and aluminium doped zinc oxide (AZO) thin films deposited on fluorine doped tin oxide (FTO) coated glass substrates by sol-gel spin coating technique are explored. Further, the effect of doping on the performance of Au/AZO/FTO Schottky diode were analysed through I–V characterization at room temperature. The c-axis orientation of the deposited films was confirmed by X-Ray diffraction studies. Micrographs from atomic force microscope revealed the wrinkled morphology and columnar structure for undoped and doped zinc oxide thin films respectively. The diode pa�rameters such as Schottky barrier height (ΦB), ideality factor (n) and series resistance (Rs) were determined by using thermionic emission model and Cheung’s model. These parameters were found to depend on the doping concentration. Devices with undoped and 6 at% aluminium doped ZnO thin films have shown better rectification.

Item Type: Article
Uncontrolled Keywords: Al doped ZnO Schottky diode Barrier height
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 20 Sep 2021 08:35
Last Modified: 20 Sep 2021 08:35

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