Investigation on spectroscopic and electrical properties of p-Si/CdSxSe1−x (0≤ x ≤1) heterostructures for photodetector applications

Moger, Sahana N and Mahesha, M G (2021) Investigation on spectroscopic and electrical properties of p-Si/CdSxSe1−x (0≤ x ≤1) heterostructures for photodetector applications. Journal of Alloys and Compounds, 870. ISSN 0925-8388

[img] PDF
12726.pdf - Published Version
Restricted to Registered users only

Download (6MB) | Request a copy
Official URL: http://www.elsevier.com/locate/jalcom

Abstract

CdSxSe1−x (0 ≤ x ≤ 1) films were deposited on p-Si via thermal co-evaporation method with CdS and CdSe as source materials. The heterostructures were studied for their structural, spectroscopic and electrical be�haviours by using X-ray diffraction, photoluminescence spectroscopy, low temperature Raman spectroscopy and I-V characterization. Systematic shift in the diffraction peak has confirmed the composition modulation and presence of mixed phase in the ternary CdSSe. Temperature dependent Raman study showed that longitudinal optical modes are shifted to higher wavenumber, which is ascribed to variation in strain and lattice constants with temperature. The diode parameters including ideality factor and barrier height were extracted by applying various models to the temperature dependent I-V measurements. The spectral re�sponse of p-Si/CdSxSe1−x (0 ≤ x ≤ 1) were analysed and the heterostructure with x = 0.2 showed high response confirming the device suitability of the heterostructures

Item Type: Article
Uncontrolled Keywords: P–Si/CdSSe heterostructures Photoluminescence Low-temperature Raman Photodetectors
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 27 Sep 2021 04:32
Last Modified: 27 Sep 2021 04:32
URI: http://eprints.manipal.edu/id/eprint/157417

Actions (login required)

View Item View Item