n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

Krishna, Ganesha V S and Mahesha, M G (2021) n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region. Sensors and Actuators, A: Physical, 332 (2). ISSN 0924-4247

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Abstract

In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumi�nation, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption

Item Type: Article
Uncontrolled Keywords: UV photodetector LT Raman Spray pyrolysis ZnO/CuZnS Thin film chalcogenides
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 20 Jan 2022 06:25
Last Modified: 20 Jan 2022 06:25
URI: http://eprints.manipal.edu/id/eprint/158086

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