A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

Balani, Warsha and Sarvagya, Mrinal and Ali, Tanweer and Samasgikar, Ajit and Kumar, Pradeep and Pathan, Sameena and Pai, Manohara M.M. (2021) A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications. Micromechanics, 12 (1520). ISSN 2072-666X

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Abstract

This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 µm Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, uti�lizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02–3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20–44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below −10 dB, and reverse isolation (S_12) was below −55 dB for the 20–44 GHz frequency band. The input 1 dB (P1dB) compression point of −18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm2 area, with input and output RF (Radio Frequency) bond pads. To the authors’ knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.

Item Type: Article
Uncontrolled Keywords: mm-wave; LNA; SiGe HBT; 5G sub-system
Subjects: Engineering > MIT Manipal > Electronics and Communication
Engineering > MIT Manipal > Information and Communication Technology
Depositing User: MIT Library
Date Deposited: 03 Mar 2022 06:14
Last Modified: 03 Mar 2022 06:14
URI: http://eprints.manipal.edu/id/eprint/158334

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