Reduction in electrical resistivity of bismuth selenide single crystal via Sn and Te co-doping

Hegde, Ganesh Shridhar and Prabhu, A N and Yang, C F and Kuo, Y K (2022) Reduction in electrical resistivity of bismuth selenide single crystal via Sn and Te co-doping. Materials Chemistry and Physics, 278. ISSN 0254-0584

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Abstract

The structural and thermoelectric transport properties of melt-grown Bi2Se3 single crystals are systematically investigated with the co-doping of Sn and Te in the temperature range 10–400 K. The powder X-ray diffraction and high-resolution X-ray diffraction studies confirm the hexagonal crystal structure with R 3 m space group. Images of the field emission scanning electron microscopy have shown crack-free smooth surface morphological features. Energy dispersive analysis of X-ray authorizes the chemical composition of elements in the samples. The degenerate semiconducting nature is observed in the entire series of samples with 6.8 times reduction in elec�trical resistivity for (Bi0.96Sn0.04)2Se2.7Te0.3 compared to the pristine Bi2Se3. The maximum ZT value of ~0.32 is obtained for Bi2Se2.7Te0.3 single crystal at 400 K, about 7.4 times larger than that of Bi2Se3.

Item Type: Article
Uncontrolled Keywords: 1- Chalcogenides 2- Semiconductors 3- Co-Doping 4- High resolution X-ray diffraction 5- Electrical resistivity 6- Thermoelectric figure of merit
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 08 Apr 2022 10:17
Last Modified: 08 Apr 2022 10:17
URI: http://eprints.manipal.edu/id/eprint/158534

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