An investigation on the role of low temperature annealing on the structural, morphological, optical, and electrical properties of DC magnetron sputtered Zn(1-x)Sn(x)O thin films

Bhat, Prashanth and Salunkhe, Parashurama and Murari, M S and Kekuda, Dhananjaya (2022) An investigation on the role of low temperature annealing on the structural, morphological, optical, and electrical properties of DC magnetron sputtered Zn(1-x)Sn(x)O thin films. Physica B, 628. ISSN 0921-4526

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Abstract

This study reveals the effect of low-temperature air annealing on various physical properties of Zn(1-x) Sn (x)O (x = 0.14) (TZO) thin films. The thin films were grown on glass substrates by co-sputtering techniques and the grown films were subjected to low temperature air -annealing. X-ray diffraction studies on the grown samples reveal a polycrystalline nature with a hexagonal wurtzite structure. A Change in orientation from (002) to (100) followed by an increase in crystallinity was observed in 100 ◦C annealed samples. A variation in the optical band gap from 3.17 to 3.44 eV after annealing was noticed. Changes in the defect density of Zn interstitials and Oxygen vacancies are clearly noticeable from PL analysis. X-ray Photoelectron Spectroscopy (XPS) elucidate an enhanced oxygen vacancies after doping. The van der Pauw resistivity measurement revealed a decrement in the resistivity after doping and annealing.

Item Type: Article
Uncontrolled Keywords: Co-sputtering Tin doped ZnO thin Films Low temperature air annealing Photoluminescence XPS Hall effect
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 12 Jul 2022 04:38
Last Modified: 12 Jul 2022 04:38
URI: http://eprints.manipal.edu/id/eprint/158899

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