Characterization of varying sp2/sp3 nanocluster’s grown under various process conditions

Niranjana , S and Satyanarayana, B S and Niranjan, U C and Shounak, De (2010) Characterization of varying sp2/sp3 nanocluster’s grown under various process conditions. International Journal of Research and reviews in Applied Sciences, 4 (1). pp. 48-54. ISSN 2076-734X, EISSN: 2076-7366

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Abstract

Continuous or pulsed vacuum based cathodic arc systems are proven as novel, and important for the thin film growth from insulator, semiconductor to conductor. There are several key process parameters such as Gas composition, conditions at substrate (Temperature, Pressure), Deposition Rate, Deposition time, Position of substrate, and type of arc. The process parameters has a significant influence on the characteristics and growth of nanocluster. The variation in the process parameter affects the nanocluster morphology, structure, composition, electronic and optoelectronic properties, which make it useful for different application. The carbon based nanocluster samples grown at fixed conditions of nitrogen partial pressure (10–4 Torr and 10–3 Torr) under varying conditions of Helium partial pressure from 5x10 – 4 Torr to 50 Torr resulted samples with different morphology and properties. Presented here morphological details of various samples grown under various process parameters, some using continuous and other using pulsed cathodic arc process. Discussed carbon nanocluster characteristics using SEM, Field emission response, and Raman response. Proposed an approach of grouping sp2/sp3 nanocarbons based statistical parameters.

Item Type: Article
Uncontrolled Keywords: sp2/sp3 thin film, Carbon based Nanocluster, Raman response, cathodic arc system
Subjects: Engineering > MIT Manipal > Biomedical
Engineering > MIT Manipal > Electronics and Communication
Depositing User: Users 63 not found.
Date Deposited: 05 Jul 2011 05:00
Last Modified: 24 Aug 2013 09:08
URI: http://eprints.manipal.edu/id/eprint/522

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