Rao, Gowrish K and Bangera, Kasturi V and Shivakumar, G K (2012) Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes. Current Applied Physics, 13 (1).

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Abstract

The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by IeV and CeV characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson’s model.

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