Dual gate Thin film Transistors based on Indium Oxide Active Layers

Kekuda, Dhananjaya and Rao, Mohan K and Tolpadi, Amita and Chu, C W (2011) Dual gate Thin film Transistors based on Indium Oxide Active Layers. In: Solid State Physics Proceedings of the 55th DAE Solid State Physics Symposium 2010, June 2011.

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Polycrystalline Indium Oxide (In2O3) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO2 served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Dual gate thin film transistor, metal oxide, complementary inverter circuit.
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 22 Jul 2011 11:14
Last Modified: 22 Jul 2011 11:14
URI: http://eprints.manipal.edu/id/eprint/923

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