Studies on Vacuum deposited p-ZnTe/n-ZnSe Heterojunction diodes

Rao, Gowrish K and Bangera, Kasturi V and Shivakumar, G K (2010) Studies on Vacuum deposited p-ZnTe/n-ZnSe Heterojunction diodes. Solid-State Electronics, 54 (8). pp. 787-790. ISSN 0038-1101

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Abstract

p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I–V and C–V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson’s model.

Item Type: Article
Additional Information: 2010 Elsevier Ltd
Uncontrolled Keywords: p-ZnTe/n-ZnSe heterojunction Vacuum deposition I–V characterization C–V characterization Band diagram
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 27 Jul 2011 06:35
Last Modified: 27 Jul 2011 06:35
URI: http://eprints.manipal.edu/id/eprint/969

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