Rao, Gowrish K and Bangera, Kasturi V and Shivakumar, G K (2011) Conduction Mechanisms in Vacuum Deposited p-ZnTe/n-Si Heterojunction Diodes. In: Proceedings of the 55th DAE Solid State Physics Symposium , 2011.
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Abstract
p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Zinc Telluride, II-VI Semiconductor, Vacuum Deposition, Thin Film, Heterojunction PACS: 72.80.Ey, 73.40.Lq |
| Subjects: | Engineering > MIT Manipal > Physics |
| Depositing User: | MIT Library |
| Date Deposited: | 27 Jul 2011 06:39 |
| Last Modified: | 27 Jul 2011 06:39 |
| URI: | http://eprints.manipal.edu/id/eprint/983 |
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