Conduction Mechanisms in Vacuum Deposited p-ZnTe/n-Si Heterojunction Diodes

Rao, Gowrish K and Bangera, Kasturi V and Shivakumar, G K (2011) Conduction Mechanisms in Vacuum Deposited p-ZnTe/n-Si Heterojunction Diodes. In: Proceedings of the 55th DAE Solid State Physics Symposium , 2011.

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Abstract

p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Zinc Telluride, II-VI Semiconductor, Vacuum Deposition, Thin Film, Heterojunction PACS: 72.80.Ey, 73.40.Lq
Subjects: Engineering > MIT Manipal > Physics
Depositing User: MIT Library
Date Deposited: 27 Jul 2011 06:39
Last Modified: 27 Jul 2011 06:39
URI: http://eprints.manipal.edu/id/eprint/983

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